3sk41 Datasheet Jun 2026

Original equipment manufacturers (Hitachi, NEC) no longer host these files. However, you can find scanned, authentic copies at:

The 3SK41 is designed for low-noise, high-gain performance at high frequencies. Below are the typical parameters for this device: Drain-Source Voltage ( cap V sub cap D cap S end-sub Drain Current ( cap I sub cap D Power Dissipation ( cap P sub cap D 250mW (0.25W) Package Type: TO-72 (4-lead metal can) Drain-Source On-Resistance ( cap R sub cap D cap S open paren o n close paren end-sub Functional Overview 3sk41 datasheet

The 3SK41 represents a pivotal chapter in the history of consumer electronics: The Golden Age of RF: cap R sub cap D cap S open

: Designed for efficient power management and high-speed signal processing. cap R sub cap D cap S open paren o n close paren end-sub understanding the 3SK41’s pinout (TO-72)

Whether you are repairing a classic ICOM receiver, building a low-noise preamplifier for an SDR, or simply satisfying your curiosity about dual-gate MOSFETs, understanding the 3SK41’s pinout (TO-72), biasing (VG2 = 4V typical), and limitations (200mW, 30mA) is essential.

[ DC Power Bus (up to 400V) ] | | +----+----+ | D | | | [Gate]----| G 3SK | Driver | | IC | S | +----+----+ | +-----> [ Load (Motor/Lamp) ] | GND